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Research Acitivities |
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Diffusion in Thin Layer Systems
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Diffusion processes and reactions in thin multilayers play an important role in technological applications. By X-ray reflectometry concentration profiles on a nanometer scale can be determined. Current research activities involve the evaluation of measured data by fitting with simulation routines.
Reflectivity of a 50nm thick sputtered Ge layer on a Si (100) wafer. A concentration profile at the Ge-Si interface after annealing at 900°C causes a damping of the oscillations.
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